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| 23 GHz LNA (21.2 - 26.5 GHz) Technical Data HMMC-5023 Features * Frequency Range: 21 .2 - 23.6 GHz and 24.5 - 26.5 GHz Specified 21- 30 GHz Performance * Low Noise Temperature: 226 K (2.5 dB N.F.) Typical * High Gain: 24 dB Typical * 50 Input/Output Matching * Single Supply Bias with Optional Bias Adjust: 5 volts (@ 24 mA Typical) Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 2980 x 620 m (74 x 24.4 mils) 10 m ( 0.4 mils) 127 15 m (5.0 0.6 mils) 80 x 80 m (3.1 x 3.1 mils), or larger Description The HMMC-5023 MMIC is a highgain low-noise amplifier (LNA) that operates from 21 GHz to over 30 GHz. By eliminating the complex tuning and assembly processes typically required by hybrid (discrete-FET) amplifiers, the HMMC-5023 is a cost-effective alternative in 21.2 - 23.6 GHz and 24.5 - 26.5 GHz communications receivers. The device has good input and output match to 50 ohms and is unconditionally stable to more than 40 GHz. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related performance variations and costs. It is fabricated using a PHEMT integrated circuit structure that provides exceptional noise and gain performance. 5965-5448E Absolute Maximum Ratings[1] Symbol VD1, VD2 VD1, VD2 ID1 ID2 Pin Tch TA TSTG Tmax Parameters/Conditions Drain Supply Voltage Gate Supply Voltage Drain Supply Current Drain Supply Current RF Input Power[2] Operating Channel Temp.[3] Backside Ambient Temp. Storage Temperature Maximum Assembly Temp. Units V V mA mA dBm C C C C -55 -65 Min. 3 0.4 Max. 8 2 35 35 15 +150 +140 +165 +300 Notes: 1. Absolute maximum rating for continuous operation unless otherwise noted. 2. Operating at this power level for extended (continuous) periods is not recommended. 3. Refer to DC Specifications/Physical Properties table for derating information. 6-34 HMMC-5023 DC Specifications/Physical Properties[1] Symbol VD1, VD2 VG1, VG2 ID1, ID2 ID1 + ID2 ch-bs Tch Parameters and Test Conditions Recommended Drain Supply Voltage Gate Supply Voltage [VD1 VD1(max), VD2 VD2(max)] Input and Output Stage Drain Supply Current (VG1 = VG2 = Open, VD1 = VD2 = 5 Volts) Total Drain Supply Current (VG1 = VG2 = Open, VD1 = VD2 = 5 Volts) Thermal Resistance[3] (Channel-to-Backside at Tch = 150C) Channel Temperature[4] (TA = 140C, MTTF = 106 hrs, VG1 = VG2 = Open, VD1 = VD = 5 Volts) Units V V mA mA C/Watt C Min. 3 0.4 12 13 Typ. 5 0.8[2] 35 24 75 150 30 Max. 7 2 Notes: 1. Backside ambient operating temperature TA = 25C unless otherwise noted. 2. Open circuit voltage at VG1 and VG2 when VD1 and VD2 are 5 volts. 3. Thermal resistance (in C/Watt) at a channel temperature T (C) can be estimated using this equation: (T) @ 75 x [T(C)+ 273] / [150C+ 273]. 4. Derate MTTF by a factor of two for every 8C above Tch. HMMC-5023 RF Specifications, Top = 25C, VD1 = VD2 = 5 V, VG1 = VG2= Open, ZO = 50 , unless otherwise noted Symbol BW Gain Gain (RLin)MIN (RLout)MIN Isolation P-1dB Parameters and Test Conditions Units Operating Bandwidth GHz Small Signal Gain dB Small Signal Gain Flatness dB Minimum Input Return Loss dB Minimum Output Return Loss dB Reverse Isolation dB Output Power @ 1 dB Gain Compression dBm Output Power @ 1 dB Gain Compression dBm (VD = 5 V, VG1= Open, VD2 = 7 V, VG2 set for ID2 = 35 mA) Saturated Output Power dBm (@ 3 dB Gain Compression) Second Harmonic Power Level dBc [f = 2f o, Pout(f o) = P-1dB, 21.2 GHz f o 23.6 GHz] Noise Figure, 22 GHz dB Noise Figure, 25 GHz 21.2-23.6 GHz 24.5-26.5 GHz Min. Typ. Max. Min. Typ. Max. 21.2 23.6 24.5 26.5 21 24 28 17 21 25 1 1.5 10 12 12 20 8 10 8 10 40 50 40 48 10 10 14 14 Psat 2nd Harm. 12 -30 12 -30 NF 2.5 3.0 2.8 3.3 6-35 HMMC-5023 Applications The HMMC-5023 low noise amplifier (LNA) is designed for use in digital radio communication systems that operate within the 21.2 GHz to 23.6 GHz frequency band. High gain and low noise temperature make it ideally suited as a front-end gain stage. The MMIC solution is a cost effective alternative to hybrid assemblies. FETs. Increasing the voltage applied to VG2 (more positively) results in a more negative gate-tosource voltage and, therefore, lower drain current. Figures 9(b) and 9(c) illustrate how the device can be assembled for both independent drain supply operation and for output-stage gate bias control. No ground wires are required since ground connections are made with plated through-holes to the backside of the device. It is recommended that the RF input and RF output connections be made using either 500 line/inch (or equivalent) gold wire mesh, or dual 0.7 mil diameter gold wire. The RF wires should be kept as short as possible to minimize inductance. The bias supply wire can be a 0.7 mil diameter gold wire attached to either of the VDD bonding pads. Thermosonic wedge is the preferred method for wire bonding to the gold bond pads. Mesh wires can be attached using a 2 mil round tacking tool and a tool force of approximately 22 grams with an ultrasonic power of roughly 55 dB for a duration of 76 8 msec. A guidedwedge at an ultrasonic power level of 64 dB can be used for the 0.7 mil wire. The recommended wire bond stage temperature is 150 2C. For more detailed information see HP application note #999 "GaAs MMIC Assembly and Handling Guidelines." GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices. Biasing and Operation The HMMC-5023 has four cascaded gain stages as shown in Figure 1. The first two gain stages at the input are biased with the VD1 drain supply. Similarly the two output stages are biased with the VD2 supply. Standard LNA operation is with a single positive DC drain supply voltage (VD1=VD2 =5 V) using the assembly diagram shown in Figure 9(a). If desired, the output stage DC supply voltage (VD2) can be increased to improve output power capability while maintaining optimum low noise bias conditions for the input section. The output power may also be adjusted by applying a positive voltage at VG2 to alter the operating bias point for both output INPUT STAGE Assembly Techniques Solder die attach using a fluxless gold-tin (AuSn) solder preform is the recommended assembly method. A conductive epoxy such as ABLEBOND(R) 71-1LM1 or ABLEBOND(R) 36-2 may also be used for die attaching provided the Absolute Maximum Thermal Ratings are not exceeded. The device should be attached to an electrically conductive surface to complete the DC and RF ground paths. Ground path inductance should be minimized (<10 pH) to assure stable operation. The backside metallization on the device is gold. OUTPUT STAGE IN OUT 92 92 VG1 VD1 VG2 VD2 Figure 1. HMMC-5023 Simplified Schematic. 6-36 HMMC-5023 Typical Performance 30 SMALL-SIGNAL GAIN (dB) VD1 = VD2 = 5.0 V Gain 0 REVERSE ISOLATION (dB) INPUT RETURN LOSS (dB) 0 VD1 = VD2 = 5.0 V Spec Range 21.2 - 23.6 GHz 0 OUTPUT RETURN LOSS (dB) 26 10 20 5 5 22 Spec Range 21.2 - 23.6 GHz 30 40 50 10 Output 10 18 15 15 14 Isolation 10 19.0 20.2 21.4 22.6 23.8 60 70 25.0 20 Input 20 25 19.0 20.2 21.4 22.6 23.8 25 25.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 2. Gain and Isolation vs. Frequency. Figure 3. Input and Output Return Loss vs. Frequency. Typical Scattering Parameters[1], (Top = 25C, VD1 = VD2 = 5.0 V, VG1 = VG2 = Open, Zo = 50 Freq. GHz 19.0 19.2 19.4 19.6 19.8 20.0 20.2 20.4 20.6 20.8 21.0 21.2 21.4 21.6 21.8 22.0 22.2 22.4 22.6 22.8 23.0 23.2 23.4 23.6 23.8 24.0 24.2 24.4 24.6 24.8 25.0 dB -6.3 -6.4 -6.6 -6.8 -7.1 -7.4 -7.8 -8.2 -8.7 -9.3 -10.0 -10.8 -11.8 -13.1 -14.7 -16.5 -18.5 -20.6 -22.7 -24.3 -24.9 -24.7 -24.2 -23.6 -23.3 -22.6 -22.2 -21.8 -21.4 -21.2 -20.9 S11 Mag 0.486 0.477 0.466 0.455 0.443 0.428 0.409 0.391 0.368 0.344 0.318 0.288 0.256 0.220 0.185 0.149 0.118 0.094 0.074 0.061 0.057 0.059 0.061 0.066 0.068 0.074 0.078 0.082 0.086 0.088 0.091 Ang 61.9 59.4 56.7 53.8 50.6 47.1 43.8 40.2 36.2 31.8 27.4 22.9 18.4 14.9 12.1 11.0 12.1 15.9 22.8 37.4 54.0 68.3 78.9 86.3 93.5 98.0 100.8 102.8 105.5 108.1 293.2 dB -61.6 -61.6 -61.0 -61.3 -62.3 -61.2 -61.3 -60.9 -59.5 -59.6 -58.2 -56.0 -54.9 -55.1 -53.8 -52.5 -51.2 -50.5 -50.0 -49.3 -48.5 -47.6 -47.3 -47.2 -46.9 -46.4 -46.1 -45.5 -45.6 -44.9 -44.4 S21 Mag 0.0008 0.0008 0.0009 0.0009 0.0008 0.0009 0.0009 0.0009 0.0011 0.0011 0.0012 0.0016 0.0018 0.0018 0.0020 0.0024 0.0028 0.0030 0.0031 0.0034 0.0037 0.0042 0.0043 0.0044 0.0045 0.0048 0.0049 0.0053 0.0052 0.0057 0.0061 Ang 122.7 116.3 113.1 104.2 93.0 72.6 66.1 47.3 25.8 11.5 -4.2 -17.6 -36.9 -52.2 -64.6 -75.8 -90.4 -100.3 -108.7 -118.9 -126.2 -134.9 -144.0 -148.9 -156.1 -161.1 -167.3 -171.7 -176.4 179.1 353.0 dB 22.3 22.6 22.5 23.2 23.0 23.5 23.9 24.4 24.7 25.1 25.4 25.6 25.7 25.7 25.7 25.9 25.6 25.6 25.0 25.1 24.3 24.2 23.9 23.2 23.3 22.4 22.3 21.6 21.8 21.4 21.0 S12 Mag 13.090 13.509 13.355 14.459 14.142 14.913 15.599 16.617 17.085 18.061 18.663 19.010 19.209 19.209 19.354 19.769 19.066 19.113 17.824 17.943 16.401 16.279 15.625 14.469 14.607 13.168 13.002 12.087 12.350 11.771 11.257 Ang 83.3 74.2 64.0 56.1 45.0 36.4 26.2 15.7 5.7 -4.7 -15.3 -26.6 -38.7 -51.3 -61.4 -74.0 -85.2 -96.2 -107.5 -116.9 -127.6 -137.5 -146.3 -154.0 -163.4 -170.8 -179.0 173.1 166.3 159.2 331.9 dB -6.6 -6.9 -7.4 -7.9 -8.4 -8.9 -9.5 -10.2 -10.8 -11.2 -11.7 -12.0 -12.1 -12.2 -11.9 -11.7 -11.3 -11.0 -10.7 -10.5 -10.4 -10.4 -10.5 -10.6 -10.5 -10.6 -10.6 -10.6 -10.7 -10.8 -10.8 S22 Mag 0.470 0.450 0.427 0.403 0.381 0.358 0.333 0.309 0.290 0.274 0.259 0.252 0.247 0.247 0.254 0.261 0.271 0.282 0.291 0.298 0.301 0.300 0.298 0.295 0.298 0.296 0.294 0.294 0.291 0.289 0.289 Ang -179.1 175.7 169.7 163.5 156.5 148.8 139.9 130.7 119.5 106.2 91.3 74.6 56.4 38.2 21.9 6.8 -6.6 -18.4 -28.7 -37.9 -45.5 -52.3 -58.0 -62.4 -65.9 -69.2 -72.0 -74.7 -76.8 -78.4 -79.3 Note: 1. Data obtained from wafer-probed measurements. 6-37 HMMC-5023 Typical Performance 30 VD1 = VD2 = 5.0 V 0.02 dB/C [1] typical 5 VD1 = VD2 = 5.0 V, TA = 25C [3] SMALL-SIGNAL GAIN (dB) 26 22 Spec Range 21.2 - 23.6 GHz NOISE FIGURE (dB) -55C -30C 0 C +30C +60C +100C 4 Spec Range 21.2 - 23.6 GHz 3 18 2 14 1 10 19.0 20.2 21.4 22.6 23.8 25.0 0 19.0 20.2 21.4 22.6 23.8 25.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Small-Signal Gain vs. Frequency and Ambient Temperature[1]. Figure 5. Noise Figure vs. Frequency[2]. 21 GHz 25 23 GHz Gain 20 10 15 SMALL HARMONIC DISTORTION (dBc) 20 VD1 = VD2 = 5.0 V 20 0 VD1 = VD2 = 5.0 V, fO = 22 GHz 30 POWER-ADDED EFFICIENCY (%) -15 Gain -30 25 GAIN (dB) 20 15 5 -45 2nd Harmonic 15 added 10 2 0 12 4 6 8 10 -60 2 4 6 8 10 10 12 OUTPUT POWER (dBm) OUTPUT POWER (dBm) Figure 6. Gain Compression and Efficiency Characteristics[2]. Figure 7. Second Harmonic and Gain Compression Characteristics[2]. Notes: 1. Device tested while mounted on a HP83040 Modular Microcircuit Fixture calibrated at the coaxial connectors. Test results shown have been degraded by the fixture due to loss and impedance mismatch errors. The temperature coefficient of the fixture alone is approximately 0.003 dB/C at 20 GHz. 2. Data obtained from wafer-probed measurements. 3. The temperature coefficient of noise figure was measured for one device mounted on a HP83040 Modular Microcircuit Fixture. The uncorrected result, <0.014 dB/C, includes the effects of the fixture. 600 520 RF INPUT 300 RF OUTPUT 300 80 0 0 435 755 1235 1555 1880 GAIN (dB) 105 (VG2 Y-axis) 0 Figure 8. HMMC-5023 Bonding Pad Locations. (Dimensions are in micrometers) 6-38 Gold Plated Shim (Optional) RFIN RFIN VD1 VD2 RFOUT RFOUT VG2 20 pF Capacitor 20 pF Capacitor R R VD1 VD2 To VDD DC Power Supply R (typ.) 90 Figure 9a. Single DC Drain Supply. Figure 9b. Assembly for custom biasing of output gain stages using an external chip resistor. To VG2 DC Power Supply (Optional) 20 pF Capacitor RFIN VG2 RFIN VD1 VD2 RFOUT VD1 VG2 RFOUT VD2 20 pF Capacitor To VD1 DC Power Supply To VD2 DC Power Supply Figure 9c. A VG2 DC supply or a resistive divider network can also be used to bias the output stages for custom applications. Figure 9. HMMC-5023 Assembly Diagram Examples. This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local HP sales representative. 6-39 |
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